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Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer

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dc.contributor.authorLee, Tsu-Ting
dc.contributor.authorChiranjeevulu, Kashi
dc.contributor.authorPedaballi, Sireesha
dc.contributor.authorCott, Daire
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDee, Chang-Fu
dc.contributor.authorChang, Edward Yi
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecDelabie, Annelies::0000-0001-9739-7419
dc.contributor.orcidimecCott, Daire::0009-0000-0890-8820
dc.date.accessioned2023-06-30T13:35:22Z
dc.date.available2022-12-17T03:12:15Z
dc.date.available2023-06-30T13:35:22Z
dc.date.embargo2023-01-31
dc.date.issued2023
dc.description.wosFundingTextThis work was financially supported by the "Center for the Semiconductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also, it is supported in part by the Ministry of Science and Technology, Taiwan, under Grant Nos. MOST 110-2634-F-009-027 and 110-2622-8-009-018-SB and by the National Chung-Shan Institute of Science and Technology, Taiwan, under No. NCSIST-403-V309(110).
dc.identifier.doi10.1116/6.0001913
dc.identifier.issn0734-2101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40884
dc.publisherA V S AMER INST PHYSICS
dc.source.beginpageArt.: 013201
dc.source.endpagena
dc.source.issue1
dc.source.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
dc.source.numberofpages10
dc.source.volume41
dc.subject.keywordsTRANSITION-METAL DICHALCOGENIDES
dc.subject.keywordsZIRCONIUM-OXIDE
dc.subject.keywordsMOS2
dc.subject.keywordsDIELECTRICS
dc.subject.keywordsHAFNIUM
dc.subject.keywordsFILMS
dc.subject.keywordsMODE
dc.subject.keywordsBULK
dc.title

Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer

dc.typeJournal article
dspace.entity.typePublication
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