Publication:

Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm

Date

2023
Journal article
https://doi.org/10.1002/aisy.202200302
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dc.contributor.authorChoi, Seoyeon
dc.contributor.authorPark, Dong Geun
dc.contributor.authorKim, Min Jung
dc.contributor.authorBang, Seain
dc.contributor.authorKim, Jungchun
dc.contributor.authorJin, Seunghee
dc.contributor.authorHuh, Ki Seok
dc.contributor.authorKim, Donghyun
dc.contributor.authorMitard, Jerome
dc.contributor.authorHan, Cheol E.
dc.contributor.authorLee, Jae Woo
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2023-04-25T10:51:56Z
dc.date.available2023-01-14T03:13:25Z
dc.date.available2023-04-25T10:51:56Z
dc.date.embargo2023-01-31
dc.date.issued2023
dc.description.wosFundingTextS.C. and D.G.P. contributed equally to this work. This research was supported by the National Research Foundation (NRF-2022R1A2C1010447, 2021R1F1A1063342), European Nanoelectronics Access (ASCENT+), WISET (Korea Foundation for Women In Science, Engineering and Technology), and Korea University Grant.
dc.identifier.doi10.1002/aisy.202200302
dc.identifier.issn2640-4567
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40978
dc.publisherWILEY
dc.source.beginpageArt. 2200302
dc.source.endpagena
dc.source.issue1
dc.source.journalADVANCED INTELLIGENT SYSTEMS
dc.source.numberofpages6
dc.source.volume5
dc.subject.keywordsCHANNEL-LENGTH
dc.subject.keywordsRATIO METHOD
dc.subject.keywordsEXTRACTION
dc.subject.keywordsINSTABILITY
dc.subject.keywordsDEFINITION
dc.subject.keywordsBIAS
dc.title

Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm

dc.typeJournal article
dspace.entity.typePublication
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