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Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Publication:
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Date
2012-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Veloso, Anabela
;
Chew, Soon Aik
;
Higuchi, Yuichi
;
Ragnarsson, Lars-Ake
;
Simoen, Eddy
;
Schram, Tom
;
Witters, Thomas
;
Van Ammel, Annemie
;
Dekkers, Harold
;
Tielens, Hilde
;
Devriendt, Katia
;
Heylen, Nancy
;
Sebaai, Farid
;
Brus, Stephan
;
Favia, Paola
;
Geypen, Jef
;
Bender, Hugo
;
Phatak, Anup
;
Chen, M. S.
;
Lu, X.
;
Ganguli, S.
;
Lei, Y.
;
Tang, W.
;
Fu, X.
;
Gandikota, S.
;
Noori, A.
;
Brand, A.
;
Yoshida, N.
;
Thean, Aaron
;
Horiguchi, Naoto
Journal
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1952
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations
Metrics
Views
1952
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations