Publication:

Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology

Date

2012-09
Proceedings Paper
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorChew, Soon Aik
dc.contributor.authorHiguchi, Yuichi
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSchram, Tom
dc.contributor.authorWitters, Thomas
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorDekkers, Harold
dc.contributor.authorTielens, Hilde
dc.contributor.authorDevriendt, Katia
dc.contributor.authorHeylen, Nancy
dc.contributor.authorSebaai, Farid
dc.contributor.authorBrus, Stephan
dc.contributor.authorFavia, Paola
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorPhatak, Anup
dc.contributor.authorChen, M. S.
dc.contributor.authorLu, X.
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T18:13:46Z
dc.date.available2021-10-20T18:13:46Z
dc.date.issued2012-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21764
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate25/09/2012
dc.source.conferencelocationKyoto Japan
dc.title

Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology

dc.typeProceedings paper
dspace.entity.typePublication
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