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Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

Date

2005
Proceedings Paper
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dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorHoussa, Michel
dc.contributor.authorLeys, Frederik
dc.contributor.authorBonzom, Renaud
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHoflijk, Ilse
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-16T06:07:43Z
dc.date.available2021-10-16T06:07:43Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11390
dc.source.conference4th International Conference on Silicon Epitaxy and Heterostructures - ICSI-4
dc.source.conferencedate23/05/2005
dc.source.conferencelocationHyogo Japan
dc.title

Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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