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Implications of side contact depth on the Schottky barrier of 2D field-effect transistors
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Implications of side contact depth on the Schottky barrier of 2D field-effect transistors
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Date
2025
Journal article
https://doi.org/10.1007/s10825-024-02262-6
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Panarella, Luca
;
Smets, Quentin
;
Verreck, Devin
;
Kaczer, Ben
;
Tyaginov, Stanislav
;
Lockhart de la Rosa, Cesar Javier
;
Kar, Gouri Sankar
;
Afanasiev, Valeri
Journal
JOURNAL OF COMPUTATIONAL ELECTRONICS
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404
since deposited on 2025-01-09
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Acq. date: 2025-12-15
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Views
404
since deposited on 2025-01-09
1
last month
Acq. date: 2025-12-15
Citations