Publication:
Implications of side contact depth on the Schottky barrier of 2D field-effect transistors
| dc.contributor.author | Panarella, Luca | |
| dc.contributor.author | Smets, Quentin | |
| dc.contributor.author | Verreck, Devin | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | Tyaginov, Stanislav | |
| dc.contributor.author | Lockhart de la Rosa, Cesar Javier | |
| dc.contributor.author | Kar, Gouri Sankar | |
| dc.contributor.author | Afanasiev, Valeri | |
| dc.contributor.imecauthor | Panarella, Luca | |
| dc.contributor.imecauthor | Smets, Quentin | |
| dc.contributor.imecauthor | Verreck, Devin | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.imecauthor | Tyaginov, Stanislav | |
| dc.contributor.imecauthor | Lockhart de la Rosa, Cesar Javier | |
| dc.contributor.imecauthor | Kar, Gouri Sankar | |
| dc.contributor.imecauthor | Afanasiev, Valeri | |
| dc.contributor.orcidimec | Smets, Quentin::0000-0002-2356-5915 | |
| dc.contributor.orcidimec | Verreck, Devin::0000-0002-3833-5880 | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.contributor.orcidimec | Tyaginov, Stanislav::0000-0002-5348-2096 | |
| dc.contributor.orcidimec | Lockhart de la Rosa, Cesar Javier::0000-0002-1401-0141 | |
| dc.contributor.orcidimec | Afanasiev, Valeri::0000-0001-5018-4539 | |
| dc.date.accessioned | 2025-02-10T12:01:26Z | |
| dc.date.available | 2025-01-09T17:22:32Z | |
| dc.date.available | 2025-02-10T12:01:26Z | |
| dc.date.issued | 2025 | |
| dc.description.wosFundingText | This work was done in the imec IIAP core CMOS programs and supported by The Research Foundation-Flanders (FWO: 1S72625N). | |
| dc.identifier.doi | 10.1007/s10825-024-02262-6 | |
| dc.identifier.issn | 1569-8025 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45055 | |
| dc.publisher | SPRINGER | |
| dc.source.beginpage | Art. 32 | |
| dc.source.endpage | N/A | |
| dc.source.issue | 1 | |
| dc.source.journal | JOURNAL OF COMPUTATIONAL ELECTRONICS | |
| dc.source.numberofpages | 6 | |
| dc.source.volume | 24 | |
| dc.title | Implications of side contact depth on the Schottky barrier of 2D field-effect transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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