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Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
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Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Marcon, Denis
;
Viaene, John
;
Stoffels, Steve
;
Vanaverbeke, Fre
;
Kang, Xuanwu
;
Lenci, Silvia
;
Srivastava, Puneet
;
Decoutere, Stefaan
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1972
since deposited on 2021-10-20
Acq. date: 2025-12-10
Citations
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Views
1972
since deposited on 2021-10-20
Acq. date: 2025-12-10
Citations