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Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance

Date

2012
Meeting abstract
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dc.contributor.authorMarcon, Denis
dc.contributor.authorViaene, John
dc.contributor.authorStoffels, Steve
dc.contributor.authorVanaverbeke, Fre
dc.contributor.authorKang, Xuanwu
dc.contributor.authorLenci, Silvia
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T13:11:57Z
dc.date.available2021-10-20T13:11:57Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21095
dc.source.conferenceWorkshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate28/05/2012
dc.source.conferencelocationIsland of Porquerolles France
dc.title

Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance

dc.typeMeeting abstract
dspace.entity.typePublication
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