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Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density
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Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alian, AliReza
;
Brammertz, Guy
;
Degraeve, Robin
;
Cho, Moon Ju
;
Merckling, Clement
;
Lin, Dennis
;
Wang, Wei-E
;
Caymax, Matty
;
Meuris, Marc
;
De Meyer, Kristin
;
Heyns, Marc
Journal
IEEE Electron Device Letters
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Views
1864
since deposited on 2021-10-20
1
last month
1
last week
Acq. date: 2025-12-16
Citations