Publication:

Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density

Date

2012
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorMerckling, Clement
dc.contributor.authorLin, Dennis
dc.contributor.authorWang, Wei-E
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-20T10:01:24Z
dc.date.available2021-10-20T10:01:24Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20278
dc.source.beginpage1544
dc.source.endpage1546
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume33
dc.title

Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles