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Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM

Date

2005
Journal article
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dc.contributor.authorBlasco, X.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-16T00:46:52Z
dc.date.available2021-10-16T00:46:52Z
dc.date.embargo9999-12-31
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10108
dc.source.beginpage811
dc.source.endpage814
dc.source.issue5_6
dc.source.journalMicroelectronics Reliability
dc.source.volume45
dc.title

Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM

dc.typeJournal article
dspace.entity.typePublication
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