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Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors
Publication:
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors
Date
2005
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Eneman, Geert
;
Simoen, Eddy
;
Delhougne, Romain
;
Gaubas, Eugenijus
;
Simons, Veerle
;
Roussel, Philippe
;
Verheyen, Peter
;
Lauwers, Anne
;
Loo, Roger
;
Vandervorst, Wilfried
;
De Meyer, Kristin
;
Claeys, Cor
Journal
Journal of Physics: Condensed Matter
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1923
since deposited on 2021-10-16
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last month
1
last week
Acq. date: 2025-12-09
Citations
Metrics
Views
1923
since deposited on 2021-10-16
4
last month
1
last week
Acq. date: 2025-12-09
Citations