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Using the low frequency component of the background signal for SiGe and Ge growth monitoring

Date

2015
Proceedings Paper
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dc.contributor.authorHalder, Sandip
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLeray, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorBast, Gerhard
dc.contributor.authorSimpson, Gavin
dc.contributor.authorUlea, Neli
dc.contributor.authorPolli, Marco
dc.contributor.imecauthorHalder, Sandip
dc.contributor.imecauthorLeray, Philippe
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBast, Gerhard
dc.contributor.imecauthorSimpson, Gavin
dc.contributor.orcidimecHalder, Sandip::0000-0002-6314-2685
dc.date.accessioned2021-10-22T19:35:21Z
dc.date.available2021-10-22T19:35:21Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25356
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7164442
dc.source.conference26th Annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate3/05/2015
dc.source.conferencelocationSaratoga Springs, NY USA
dc.title

Using the low frequency component of the background signal for SiGe and Ge growth monitoring

dc.typeProceedings paper
dspace.entity.typePublication
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