Publication:

Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

Date

2021
Journal article
https://doi.org/10.1038/s41699-020-00186-w
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dc.contributor.authorLee, Kookjin
dc.contributor.authorNam, Sangjin
dc.contributor.authorJi, Hyunjin
dc.contributor.authorChoi, Junhee
dc.contributor.authorJin, Jun-Eon
dc.contributor.authorKim, Yeonsu
dc.contributor.authorNa, Junhong
dc.contributor.authorRyu, Min-Yeul
dc.contributor.authorCho, Young-Hoon
dc.contributor.authorLee, Hyebin
dc.contributor.authorLee, Jaewoo
dc.contributor.authorJoo, Min-Kyu
dc.contributor.authorKim, Gyu-Tae
dc.contributor.imecauthorLee, Kookjin
dc.contributor.orcidimecLee, Kookjin::0000-0002-9896-1090
dc.date.accessioned2022-02-23T10:30:46Z
dc.date.available2022-02-23T10:30:46Z
dc.date.issued2021
dc.identifier.doi10.1038/s41699-020-00186-w
dc.identifier.issn2397-7132
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39051
dc.publisherNATURE PORTFOLIO
dc.source.beginpage4
dc.source.issue1
dc.source.journalNPJ 2D MATERIALS AND APPLICATIONS
dc.source.numberofpages9
dc.source.volume5
dc.subject.keywordsFIELD-EFFECT TRANSISTORS
dc.subject.keywordsHIDDEN MARKOV MODEL
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywords1/F NOISE
dc.subject.keywordsGRAPHENE
dc.subject.keywordsMICROSTRUCTURES
dc.subject.keywordsSTATES
dc.title

Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

dc.typeJournal article
dspace.entity.typePublication
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