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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Date

2018
Journal article
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dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorWeckx, Pieter
dc.contributor.authorRoussel, Philippe
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorBury, Erik
dc.contributor.authorSimicic, Marko
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorLinten, Dimitri
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCatthoor, Francky
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorWaltl, Michael
dc.contributor.authorGrasser, Tibor
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCatthoor, Francky
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCatthoor, Francky::0000-0002-3599-8515
dc.date.accessioned2021-10-25T20:32:20Z
dc.date.available2021-10-25T20:32:20Z
dc.date.issued2018
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30988
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S0026271417305516
dc.source.beginpage186
dc.source.endpage194
dc.source.journalMicroelectronics Reliability
dc.source.volume81
dc.title

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

dc.typeJournal article
dspace.entity.typePublication
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