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Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry
Publication:
Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry
Date
2016
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ritzenthaler, Romain
;
Schram, Tom
;
Spessot, Alessio
;
Caillat, Christian
;
Cho, Moon Ju
;
Simoen, Eddy
;
Aoulaiche, Marc
;
Albert, Johan
;
Chew, Soon Aik
;
Noh, Kyung Bong
;
Son, Yunik
;
Mitard, Jerome
;
Mocuta, Anda
;
Horiguchi, Naoto
;
Fazan, Pierre
;
Thean, Aaron
Journal
IEEE Transactions on Electron Devices
Abstract
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1968
since deposited on 2021-10-23
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last month
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last week
Acq. date: 2025-12-08
Citations
Metrics
Views
1968
since deposited on 2021-10-23
1
last month
1
last week
Acq. date: 2025-12-08
Citations