Publication:

Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry

Date

2016
Journal article
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dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorSpessot, Alessio
dc.contributor.authorCaillat, Christian
dc.contributor.authorCho, Moon Ju
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorAlbert, Johan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorNoh, Kyung Bong
dc.contributor.authorSon, Yunik
dc.contributor.authorMitard, Jerome
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorFazan, Pierre
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorFazan, Pierre
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T14:14:40Z
dc.date.available2021-10-23T14:14:40Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27219
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7348710
dc.source.beginpage265
dc.source.endpage271
dc.source.issue1
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry

dc.typeJournal article
dspace.entity.typePublication
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