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Wet-chemical approaches for atomic layer etching of semiconductors: surface chemistry, oxide removal and reoxidation of InAs (100)

Date

2015
Journal article
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dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-23T00:01:17Z
dc.date.available2021-10-23T00:01:17Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26053
dc.identifier.urlhttp://jss.ecsdl.org/content/4/6/N5061.abstract
dc.source.beginpageN5061
dc.source.endpageN5066
dc.source.issue6
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume4
dc.title

Wet-chemical approaches for atomic layer etching of semiconductors: surface chemistry, oxide removal and reoxidation of InAs (100)

dc.typeJournal article
dspace.entity.typePublication
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