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A detailed study on the growth of thin oxide layers on silicon using ozonated solutions

Date

2000
Journal article
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dc.contributor.authorDe Smedt, Frank
dc.contributor.authorVinckier, Chris
dc.contributor.authorCornelissen, Ingrid
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorCornelissen, Ingrid
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-14T12:49:28Z
dc.date.available2021-10-14T12:49:28Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4273
dc.source.beginpage1124
dc.source.endpage1129
dc.source.issue3
dc.source.journalJournal of the Electrochemical Society
dc.source.volume147
dc.title

A detailed study on the growth of thin oxide layers on silicon using ozonated solutions

dc.typeJournal article
dspace.entity.typePublication
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