Strained Si/SiGe MOS technology: improving gate dielectric integrity

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18906.pdf 514 KB

Author(s)

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Escobedo-Cousin, A.G.

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Hellstrom, P.E.

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Journal

Microelectronic Engineering

Metrics

1952 since deposited on 2021-10-18

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Acq. date: 2025-10-25