Publication:

Strained Si/SiGe MOS technology: improving gate dielectric integrity

Date

2009
Journal article
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dc.contributor.authorOlsen, S.H.
dc.contributor.authorYan, L.
dc.contributor.authorAgaiby, R.
dc.contributor.authorEscobedo-Cousin, A.G.
dc.contributor.authorO'Neil, A.G.
dc.contributor.authorHellstrom, P.E.
dc.contributor.authorOstling, M.
dc.contributor.authorLyutovich, K.
dc.contributor.authorKasper, E.
dc.contributor.authorClaeys, Cor
dc.contributor.authorParker, E.H.C.
dc.date.accessioned2021-10-18T01:15:57Z
dc.date.available2021-10-18T01:15:57Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15942
dc.source.beginpage218
dc.source.endpage223
dc.source.issue3
dc.source.journalMicroelectronic Engineering
dc.source.volume86
dc.title

Strained Si/SiGe MOS technology: improving gate dielectric integrity

dc.typeJournal article
dspace.entity.typePublication
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