Publication:
The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
Date
Loading...
Files
Journal
Abstract
Description
Metrics
Views
1814 since deposited on 2021-10-17
415item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1814 since deposited on 2021-10-17
415item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations