Publication:

Improving CMOS performance by AVD® grown high-k dielectrics and advanced metal electrodes

Date

 
dc.contributor.authorWeber, U.
dc.contributor.authorBoissière, O.
dc.contributor.authorLindner, J.
dc.contributor.authorSchuhmacher, M.
dc.contributor.authorLehnen, Peer
dc.contributor.authorManke, C.
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorCosnier, V.
dc.contributor.authorMcEntee, T.
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-16T07:05:09Z
dc.date.available2021-10-16T07:05:09Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11548
dc.source.beginpage293
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
dc.title

Improving CMOS performance by AVD® grown high-k dielectrics and advanced metal electrodes

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: