Publication:

Ni(Pt)Si thermal stability improvement by carbon implantation

Date

2008
Proceedings Paper
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dc.contributor.authorMertens, Sofie
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVrancken, Christa
dc.contributor.authorJakschik, Stefan
dc.contributor.authorRichard, Olivier
dc.contributor.authorVerleysen, Eveline
dc.contributor.authorBender, Hugo
dc.contributor.authorZhao, Chao
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAbsil, Philippe
dc.contributor.authorLauwers, Anne
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorLauwers, Anne
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-17T09:02:23Z
dc.date.available2021-10-17T09:02:23Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14166
dc.source.beginpage397
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment
dc.source.conferencedate18/05/2008
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage404
dc.title

Ni(Pt)Si thermal stability improvement by carbon implantation

dc.typeProceedings paper
dspace.entity.typePublication
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