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Vertical localization of trapped holes in SiON pMOSFETs after positive and negative gate stress
Publication:
Vertical localization of trapped holes in SiON pMOSFETs after positive and negative gate stress
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Date
2010
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Toledano Luque, Maria
;
Kaczer, Ben
;
Roussel, Philippe
;
Degraeve, Robin
;
Franco, Jacopo
;
Kauerauf, Thomas
;
Grasser, Tibor
;
Groeseneken, Guido
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1835
since deposited on 2021-10-18
1
last month
Acq. date: 2026-01-10
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Metrics
Views
1835
since deposited on 2021-10-18
1
last month
Acq. date: 2026-01-10
Citations