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Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions
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Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions
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Date
2012-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Loo, Roger
;
Vincent, Benjamin
;
Hikavyy, Andriy
;
Gencarelli, Federica
;
Eneman, Geert
;
Witters, Liesbeth
;
Mitard, Jerome
;
Hellings, Geert
;
Sioncke, Sonja
;
Bender, Hugo
;
Eyben, Pierre
;
Caymax, Matty
;
Vandervorst, Wilfried
;
Thean, Aaron
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1782
since deposited on 2021-10-20
Acq. date: 2025-12-15
Citations
Metrics
Views
1782
since deposited on 2021-10-20
Acq. date: 2025-12-15
Citations