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Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions

Date

2012-09
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorVincent, Benjamin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorGencarelli, Federica
dc.contributor.authorEneman, Geert
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorHellings, Geert
dc.contributor.authorSioncke, Sonja
dc.contributor.authorBender, Hugo
dc.contributor.authorEyben, Pierre
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.date.accessioned2021-10-20T12:58:11Z
dc.date.available2021-10-20T12:58:11Z
dc.date.issued2012-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21059
dc.source.conferenceIUMRS-International Conference on Electronic Materials - IUMS-ICEM
dc.source.conferencedate23/09/2012
dc.source.conferencelocationYokohama Japan
dc.title

Epitaxial growth in advanced SiGe and Ge MOS devices: challenges and solutions

dc.typeProceedings paper
dspace.entity.typePublication
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