Publication:

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Date

2009
Journal article
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dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSilvestri, Marco
dc.contributor.authorGerardin, Simone
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorKaczer, Ben
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorNackaerts, Axel
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-17T22:33:51Z
dc.date.available2021-10-17T22:33:51Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15397
dc.source.beginpage2205
dc.source.endpage2212
dc.source.issue4, part 2
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume56
dc.title

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

dc.typeJournal article
dspace.entity.typePublication
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