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Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

Date

2005
Journal article
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dc.contributor.authorPuurunen, Riikka
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorGreen, Martin
dc.contributor.authorBrijs, Bert
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHellin, David
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorZhao, Chao
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHoflijk, Ilse
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T04:19:17Z
dc.date.available2021-10-16T04:19:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11066
dc.source.beginpage73116
dc.source.issue7
dc.source.journalApplied Physics Letters
dc.source.volume86
dc.title

Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

dc.typeJournal article
dspace.entity.typePublication
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