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Comprehensive study of the fabrication of SGOI substrates by the Ge condensation technique: oxidation kinetics and relaxation mechanism

Date

2009
Meeting abstract
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dc.contributor.authorSouriau, Laurent
dc.contributor.authorWang, Gang
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T03:18:45Z
dc.date.available2021-10-18T03:18:45Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16260
dc.identifier.urlhttp://www.electrochem.org/
dc.source.beginpage2388
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.title

Comprehensive study of the fabrication of SGOI substrates by the Ge condensation technique: oxidation kinetics and relaxation mechanism

dc.typeMeeting abstract
dspace.entity.typePublication
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