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Oxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering

Date

2013-06
Meeting abstract
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dc.contributor.authorCaymax, Matty
dc.contributor.authorJayachandran, Suseendran
dc.contributor.authorLu, Augustin
dc.contributor.authorDelabie, Annelies
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorJayachandran, Suseendran
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-21T06:53:23Z
dc.date.available2021-10-21T06:53:23Z
dc.date.issued2013-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22108
dc.source.conferenceJSPS Core-to-Core Program Seminar on 'Atomically Controlled Processing for ULSI'
dc.source.conferencedate6/06/2013
dc.source.conferencelocationKyushu Japan
dc.title

Oxygen in Si epitaxial growth: from interface contamination to Si/O superlattice engineering

dc.typeMeeting abstract
dspace.entity.typePublication
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