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Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques

Date

1995
Proceedings Paper
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorGräf, D.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorLambert, U.
dc.contributor.authorHeyns, Marc
dc.contributor.authorClaeys, C.
dc.contributor.authorRichter, H.
dc.contributor.authorWagner, Patrick
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-29T13:22:07Z
dc.date.available2021-09-29T13:22:07Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/973
dc.source.beginpage1755
dc.source.conferenceProceedings 18th International Conference on Defects in Semiconductors - ICDS-18; July 23 -28, 1995; Sendai, Japan.
dc.source.conferencedate23/07/1995
dc.source.conferencelocationSendai Japan
dc.source.endpage1760
dc.title

Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques

dc.typeProceedings paper
dspace.entity.typePublication
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