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Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET
Publication:
Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET
Date
2021
Journal article
https://doi.org/10.1088/1361-6528/abd278
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lee, Kookjin
;
Kim, Yeonsu
;
Lee, Hyebin
;
Park, Sojeong
;
Lee, Yongwoo
;
Joo, Min-Kyu
;
Ji, Hyunjin
;
Lee, Jaewoo
;
Chun, Jungu
;
Sung, Moonsoo
;
Cho, Young-Hoon
;
Kim, Doyoon
;
Choi, Junhee
;
Lee, Jae Woo
;
Jeon, Dae-Young
;
Choi, Sung-Jin
;
Kim, Gyu-Tae
Journal
NANOTECHNOLOGY
Abstract
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1587
since deposited on 2021-11-02
Acq. date: 2025-10-24
Citations
Metrics
Views
1587
since deposited on 2021-11-02
Acq. date: 2025-10-24
Citations