Publication:

1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm

Date

2019
Meeting abstract
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dc.contributor.authorMartens, Koen
dc.contributor.authorDu Bois, Bert
dc.contributor.authorVan Roy, Wim
dc.contributor.authorSeveri, Simone
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorGupta, Anshul
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorRadisic, Dunja
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorDu Bois, Bert
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorGupta, Anshul
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecDu Bois, Bert::0000-0003-0147-1296
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-27T13:39:36Z
dc.date.available2021-10-27T13:39:36Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33552
dc.identifier.urlhttps://infoscience.epfl.ch/record/269192
dc.source.beginpage66
dc.source.conferenceICNF conference
dc.source.conferencedate18/01/2019
dc.source.conferencelocationNeuchatel Switzerland
dc.source.endpage68
dc.title

1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm

dc.typeMeeting abstract
dspace.entity.typePublication
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