Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise

Publication:

2007

Journal article

Author(s)

Magnone, Paolo

;

Crupi, Felice

;

Pantisano, Luigi

;

Pace, Calogero

Applied Physics Letters

1960 since deposited on 2021-10-16

1last month

Acq. date: 2026-10-12