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Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
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1950 since deposited on 2021-10-16
Acq. date: 2025-10-23
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Views
1950 since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations