Publication:
Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
Date
| dc.contributor.author | Magnone, Paolo | |
| dc.contributor.author | Crupi, Felice | |
| dc.contributor.author | Pantisano, Luigi | |
| dc.contributor.author | Pace, Calogero | |
| dc.date.accessioned | 2021-10-16T17:46:04Z | |
| dc.date.available | 2021-10-16T17:46:04Z | |
| dc.date.issued | 2007-02 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12539 | |
| dc.source.beginpage | 73507 | |
| dc.source.issue | 7 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 90 | |
| dc.title | Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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