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A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
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A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
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Date
2007
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chang, Vincent
;
Ragnarsson, Lars-Ake
;
Pourtois, Geoffrey
;
O'Connor, Robert
;
Adelmann, Christoph
;
Van Elshocht, Sven
;
Delabie, Annelies
;
Swerts, Johan
;
Van der Heyden, Nikolaas
;
Conard, Thierry
;
Cho, Hag-Ju
;
Akheyar, Amal
;
Mitsuhashi, Riichirou
;
Witters, Thomas
;
O'Sullivan, Barry
;
Pantisano, Luigi
;
Rohr, Erika
;
Lehnen, Peer
;
Kubicek, Stefan
;
Schram, Tom
;
De Gendt, Stefan
;
Absil, Philippe
;
Biesemans, Serge
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1992
since deposited on 2021-10-16
2
last month
1
last week
Acq. date: 2026-01-06
Citations
Metrics
Views
1992
since deposited on 2021-10-16
2
last month
1
last week
Acq. date: 2026-01-06
Citations