Publication:

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Date

2007
Proceedings Paper
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dc.contributor.authorChang, Vincent
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorO'Connor, Robert
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSwerts, Johan
dc.contributor.authorVan der Heyden, Nikolaas
dc.contributor.authorConard, Thierry
dc.contributor.authorCho, Hag-Ju
dc.contributor.authorAkheyar, Amal
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorWitters, Thomas
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRohr, Erika
dc.contributor.authorLehnen, Peer
dc.contributor.authorKubicek, Stefan
dc.contributor.authorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T15:14:53Z
dc.date.available2021-10-16T15:14:53Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11840
dc.source.beginpage535
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
dc.source.endpage538
dc.title

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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