Publication:

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Date

2017
Proceedings Paper
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dc.contributor.authorAouassa, Mansour
dc.contributor.authorVrielinck, Henk
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-24T02:52:41Z
dc.date.available2021-10-24T02:52:41Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27755
dc.identifier.urlhttp://ecst.ecsdl.org/content/80/4/181
dc.source.beginpage181
dc.source.conferenceSemiconductor Process Integration 10
dc.source.conferencedate3/10/2017
dc.source.conferencelocationNational Harbor, MD USA
dc.source.endpage190
dc.title

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

dc.typeProceedings paper
dspace.entity.typePublication
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