Publication:

3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability

Date

2018
Proceedings Paper
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dc.contributor.authorVandooren, Anne
dc.contributor.authorFranco, Jacopo
dc.contributor.authorParvais, Bertrand
dc.contributor.authorWu, Zhicheng
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorWalke, Amey
dc.contributor.authorLi, Waikin
dc.contributor.authorPeng, Lan
dc.contributor.authorDeshpande, Veeresh Vidyadhar
dc.contributor.authorBufler, Fabian
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorHellings, Geert
dc.contributor.authorJamieson, Geraldine
dc.contributor.authorInoue, Fumihiro
dc.contributor.authorVerbinnen, Greet
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTeugels, Lieve
dc.contributor.authorHeylen, Nancy
dc.contributor.authorVecchio, Emma
dc.contributor.authorTao, Zheng
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorLi, Waikin
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorBufler, Fabian
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorJamieson, Geraldine
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorVerbinnen, Greet
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorRosseel, Erik
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecBufler, Fabian::0000-0002-1558-9378
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecJamieson, Geraldine::0000-0002-6750-097X
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-26T07:49:25Z
dc.date.available2021-10-26T07:49:25Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32137
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8510705
dc.source.beginpage69
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate18/06/2018
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage70
dc.title

3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability

dc.typeProceedings paper
dspace.entity.typePublication
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