Publication:

Sputter yield and stoichiometry study of InGaZnO film in ion beam etching

Date

2025-MAY
Journal article
https://doi.org/10.1116/6.0004243
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dc.contributor.authorLi, Jie
dc.contributor.authorKundu, Shreya
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLazzarino, Frederic
dc.contributor.authorDevriendt, Katia
dc.contributor.imecauthorLi, Jie
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLazzarino, Frederic
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.orcidimecLi, Jie::0009-0005-0093-537X
dc.contributor.orcidimecKundu, Shreya::0000-0001-8052-7774
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLazzarino, Frederic::0000-0001-7961-9727
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.date.accessioned2025-03-31T05:47:06Z
dc.date.available2025-03-31T05:47:06Z
dc.date.issued2025-MAY
dc.description.wosFundingTextThe authors would like to thank Harold Dekkers, Thierry Conard, and Attilio Belmonte (all from IMEC) for their assistance with this study. We also appreciate the support of IMEC's MCA team for their help with the characterization process.
dc.identifier.doi10.1116/6.0004243
dc.identifier.issn0734-2101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45463
dc.publisherA V S AMER INST PHYSICS
dc.source.issue3
dc.source.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
dc.source.numberofpages8
dc.source.volume43
dc.subject.keywordsRAY PHOTOELECTRON-SPECTROSCOPY
dc.subject.keywordsOXIDE
dc.subject.keywordsSILICON
dc.subject.keywordsSURFACE
dc.subject.keywordsANGLE
dc.subject.keywordsTRANSISTORS
dc.subject.keywordsENERGIES
dc.subject.keywordsOXYGEN
dc.subject.keywordsSIO2
dc.title

Sputter yield and stoichiometry study of InGaZnO film in ion beam etching

dc.typeJournal article
dspace.entity.typePublication
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