Publication:

3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

Date

2019
Proceedings Paper
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dc.contributor.authorVerreck, Devin
dc.contributor.authorArreghini, Antonio
dc.contributor.authorSchanovsky, Franz
dc.contributor.authorStanojevic, Zlatan
dc.contributor.authorSteiner, K.
dc.contributor.authorMitterbauer, F.
dc.contributor.authorKarner, Markus
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorFurnemont, Arnaud
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.accessioned2021-10-27T22:42:05Z
dc.date.available2021-10-27T22:42:05Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34377
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate4/09/2019
dc.source.conferencelocationUdine Italy
dc.title

3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

dc.typeProceedings paper
dspace.entity.typePublication
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