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Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors

Date

2005
Proceedings Paper
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dc.contributor.authorGoux, Ludovic
dc.contributor.authorLisoni, Judit
dc.contributor.authorSchwitters, Michael
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorMaes, D.
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorWouters, Dirk
dc.contributor.authorMenou, M.
dc.contributor.authorTurquat, Ch.
dc.contributor.authorMadigou, V.
dc.contributor.authorMuller, Ch.
dc.contributor.authorZambrano, R.
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-16T01:47:44Z
dc.date.available2021-10-16T01:47:44Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10516
dc.source.beginpage163
dc.source.conferenceProceedings 1st International Conference on Memory Technology and Design
dc.source.conferencedate21/05/2005
dc.source.conferencelocationGiens France
dc.source.endpage166
dc.title

Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors

dc.typeProceedings paper
dspace.entity.typePublication
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