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Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs
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Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs
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Date
2009
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18693.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Grasser, Tibor
;
Kaczer, Ben
Journal
IEEE Transactions on Electron Devices
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Views
1815
since deposited on 2021-10-17
1
last month
Acq. date: 2026-08-28
Citations