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Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs

Date

2009-05
Journal article
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dc.contributor.authorGrasser, Tibor
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-17T22:32:51Z
dc.date.available2021-10-17T22:32:51Z
dc.date.embargo9999-12-31
dc.date.issued2009-05
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15393
dc.source.beginpage1056
dc.source.endpage1062
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume56
dc.title

Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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