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Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
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Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Masahara, Meishoku
;
Surdeanu, Radu
;
Witters, Liesbeth
;
Doornbos, Gerben
;
Nguyen Hoang, Viet
;
Van den Bosch, Geert
;
Vrancken, Christa
;
Devriendt, Katia
;
Neuilly, Francois
;
Kunnen, Eddy
;
Jurczak, Gosia
;
Biesemans, Serge
Journal
IEEE Electron Device Letters
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1892
since deposited on 2021-10-16
Acq. date: 2026-07-16
Citations
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Views
1892
since deposited on 2021-10-16
Acq. date: 2026-07-16
Citations