Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
Publication:
Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
Date
2007-03
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Masahara, Meishoku
;
Surdeanu, Radu
;
Witters, Liesbeth
;
Doornbos, Gerben
;
Nguyen Hoang, Viet
;
Van den Bosch, Geert
;
Vrancken, Christa
;
Devriendt, Katia
;
Neuilly, Francois
;
Kunnen, Eddy
;
Jurczak, Gosia
;
Biesemans, Serge
Journal
IEEE Electron Device Letters
Abstract
Description
Metrics
Views
1887
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1887
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations