Publication:

Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope

Date

2007-03
Journal article
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dc.contributor.authorMasahara, Meishoku
dc.contributor.authorSurdeanu, Radu
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDoornbos, Gerben
dc.contributor.authorNguyen Hoang, Viet
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVrancken, Christa
dc.contributor.authorDevriendt, Katia
dc.contributor.authorNeuilly, Francois
dc.contributor.authorKunnen, Eddy
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorDoornbos, Gerben
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.date.accessioned2021-10-16T17:53:26Z
dc.date.available2021-10-16T17:53:26Z
dc.date.issued2007-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12564
dc.source.beginpage217
dc.source.endpage219
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope

dc.typeJournal article
dspace.entity.typePublication
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