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Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration

Date

2020-09
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorJourdain, Anne
dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLiebens, Maarten
dc.contributor.authorBecker, Lucas
dc.contributor.authorStorck, Peter
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorJourdain, Anne
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLiebens, Maarten
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-29T00:10:34Z
dc.date.available2021-10-29T00:10:34Z
dc.date.issued2020-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35502
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09804.0157ecst/pdf
dc.source.beginpage157
dc.source.conferencePRiME 2020: Semiconductor Wafer Bonding: Science, Technology, and Applications 16
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu USA
dc.source.endpage166
dc.title

Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration

dc.typeProceedings paper
dspace.entity.typePublication
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