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Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy

Date

2009
Journal article
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dc.contributor.authorPolspoel, Wouter
dc.contributor.authorFavia, Paola
dc.contributor.authorMody, Jay
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.date.accessioned2021-10-18T01:48:35Z
dc.date.available2021-10-18T01:48:35Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16035
dc.identifier.urlhttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000106000002024101000001&idtype=cvips&gifs=Yes
dc.source.beginpage24101
dc.source.issue2
dc.source.journalJournal of Applied Physics
dc.source.volume106
dc.title

Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy

dc.typeJournal article
dspace.entity.typePublication
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